cmpdm7002a CMPDM7002AG* surface mount n-channel enhancement-mode silicon mosfet description: the central semiconductor cmpdm7002a and CMPDM7002AG are special versions of the 2n7002 enhancement-mode n-channel field effect transistor, manufactured by the n-channel dmos process, designed for high speed pulsed amplifier and driver applications. these special devices offer low r ds(on) and low v ds (on). maximum ratings: (t a =25c) symbol units drain-source voltage v ds 60 v drain-gate voltage v dg 60 v gate-source voltage v gs 40 v continuous drain current i d 280 ma continuous source current (body diode) i s 280 ma maximum pulsed drain current i dm 1.5 a maximum pulsed source current i sm 1.5 a power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i gssf , i gssr v gs =20v, v ds =0 100 na i dss v ds =60v, v gs =0 1.0 a i dss v ds =60v, v gs =0, t j =125c 500 a i d(on) v gs =10v, v ds =10v 500 ma bv dss v gs =0, i d =10a 60 v v gs(th) v ds =v gs , i d =250a 1.0 2.5 v v ds(on) v gs =10v, i d =500ma 1.0 v v ds(on) v gs =5.0v, i d =50ma 0.15 v v sd v gs =0, i s =400ma 1.2 v r ds(on) v gs =10v, i d =500ma 2.0 r ds(on) v gs =10v, i d =500ma, t j =125c 3.5 r ds(on) v gs =5.0v, i d =50ma 3.0 r ds(on) v gs =5.0v, i d =50ma, t j =125c 5.0 g fs v ds =10v, i d =200ma 80 ms c rss v ds =25v, v gs =0, f=1.0mhz 5.0 pf c iss v ds =25v, v gs =0, f=1.0mhz 50 pf c oss v ds =25v, v gs =0, f=1.0mhz 25 pf t on , t off v dd =30v, v gs =10v, i d =200ma, r g =25, r l =150 20 ns marking codes: cmpdm7002a: c702a CMPDM7002AG*: 702g sot-23 case r4 (27-january 2010) * device is halogen free by design www.centralsemi.com
cmpdm7002a CMPDM7002AG* surface mount n-channel enhancement-mode silicon mosfet lead code: 1) gate 2) source 3) drain marking codes: cmpdm7002a: c702a CMPDM7002AG*: 702g sot-23 case - mechanical outline * device is halogen free by design www.centralsemi.com r4 (27-january 2010)
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